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- W2026007435 abstract "We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (1 0 0) Si substrates. They were implanted with 200 keV N2+, to 1 × 1017 and 2 × 1017 at/cm2, the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (Al,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al–Ti intermixing within the structures." @default.
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- W2026007435 date "2008-05-01" @default.
- W2026007435 modified "2023-10-17" @default.
- W2026007435 title "High fluence nitrogen implantation in Al/Ti multilayers" @default.
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- W2026007435 doi "https://doi.org/10.1016/j.nimb.2008.03.034" @default.
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