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- W2026139064 abstract "Abstract Using photoluminescence (PL) and photoreflectance (PR) spectroscopy, we report the optical properties of Al 0.24 Ga 0.76 As/In 0.15 Ga 0.85 As/GaAs delta-doped pseudomorphic high electron mobility transistor structures with various annealing temperatures. In both PL and PR spectra measured at 12 K, a transition from the first electron subband to the second heavy hole (12H) at 1.35 eV is newly observed at above 600°C annealing temperature. The presence of 12H transition peak could be explained by the decrease of phase space filling on the first electron subband and the high availability of holes in the second heavy-hole level after rapid thermal annealing." @default.
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- W2026139064 date "2002-08-01" @default.
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- W2026139064 title "Photoluminescence and photoreflectance of Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures after rapid thermal annealing" @default.
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- W2026139064 doi "https://doi.org/10.1016/s0022-0248(02)01478-1" @default.
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