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• W2026265831 abstract "Abstract By means of the elastic recoil detection (ERD) analysis technique, H and D concentration distributions in SiC single crystals implanted with 13 keV H + and 10 keV D + were measured. The profiles obtained were compared with simulated range profiles as well as defect distributions created during the implantation. The thermal release of D retained in the crystal was studied by isochronal annealing up to 1200 °C. The binding energy of D in SiC was estimated to be 4.0±0.2 eV ." @default.
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• W2026265831 date "1984-12-01" @default.
• W2026265831 modified "2023-09-24" @default.
• W2026265831 title "Retention of hydrogen implanted into SiC single crystals" @default.
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• W2026265831 doi "https://doi.org/10.1016/0022-3115(84)90453-7" @default.
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