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- W2026297089 abstract "Sputter deposition process conditions for dielectric metal oxide films was simulated by SIMSPUD<SUP>TM</SUP> (Simulation of Sputtered Distributions). Collision cross-sections of Nb and Si were found to be 50 angstroms<SUP>2</SUP> and 55 angstroms<SUP>2</SUP> respectively by pinhole experiment and simulation. Film thickness distributions of Nb and Si films vs their oxide counterparts (Nb<SUB>2</SUB>O<SUB>5</SUB> vs SiO<SUB>2</SUB>) showed that the deposition rate ratio of SiO<SUB>2</SUB> to Si is 2.03 - 2.05:1 while Nb to Nb<SUB>2</SUB>O<SUB>5</SUB> is 1.76 - 1.77:1. It was determined that the current density distribution and oxygen flow for reactive sputtering had great influence on film stoichiometry and thickness. It was also found that the ion source flattened the oxide film thickness. SIMSPUD was shown to be a desirable tool for new product development and as such could be beneficial in the design of the next generation PVD system." @default.
- W2026297089 created "2016-06-24" @default.
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- W2026297089 date "2000-11-29" @default.
- W2026297089 modified "2023-10-17" @default.
- W2026297089 title "Computer simulation of Nb 2 O 5 /SiO 2 sputtering process for narrow-band optical filter" @default.
- W2026297089 doi "https://doi.org/10.1117/12.408294" @default.
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