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- W2026300648 abstract "The pressure and temperature dependencies for vapor-liquid-solid (VLS) growth of Ge nanostructures on Si using chemical vapor deposition are reported. Gold nanodots self-assembled by evaporation on clean hydrogen-terminated and heated Si substrates are used to seed the liquid eutectic VLS growth. Digermane pressures are varied from 4×10−5 to 1×10−2Torr and substrate temperatures from 400 to 600°C for heteroepitaxial growth on Si(111). Two types of nanostructures are identified, nanowires and nanopillars, with a transition from nanopillar growth to nanowire growth occurring with increasing pressure. Nanowires are characterized by rapid vertical growth, long-aspect-ratio structures, and linear dependence of the growth rate on pressure. At lower pressures a transition to nanopillars is observed; these exhibit both vertical and lateral growth with typical aspect ratios of 1:2. For Si(111) substrates nanowires grow epitaxially with their growth axis along the ⟨111⟩ direction. High-resolution transmission electron microscopy shows that the Ge nanowires are relaxed to their equilibrium lattice spacings a short distance from the Si substrate interface." @default.
- W2026300648 created "2016-06-24" @default.
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- W2026300648 date "2004-12-15" @default.
- W2026300648 modified "2023-09-24" @default.
- W2026300648 title "Vapor-liquid-solid growth of germanium nanostructures on silicon" @default.
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- W2026300648 doi "https://doi.org/10.1063/1.1815051" @default.
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