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- W2026335707 abstract "When the oxide of a previously x-ray irradiated metal–oxide–semiconductor field-effect transistor is exposed to a hydrogen environment at room temperature the number of interface traps is observed to double, and the number of fixed oxide traps to decrease by a similar amount. From an analysis of this post-irradiation behavior we derive a model for the formation of interface states during and immediately after irradiation. In this model holes formed in the oxide during the irradiation split ≡SiH bonds in the oxide to form atomic hydrogen and ≡Si+. At room temperature the atomic hydrogen quickly dimerize to form H2. The H2 is then cracked by the ≡Si+ to form H+. Each H+ is transported to the interface, where it forms an interface state. This model also explains the results of a recent experiment which had seemed to indicate that no H+ was formed in the oxide as a result of irradiation." @default.
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- W2026335707 date "1991-12-02" @default.
- W2026335707 modified "2023-10-16" @default.
- W2026335707 title "Model for Si–SiO<sub>2</sub>interface state formation during irradiation and during post‐irradiation exposure to hydrogen environment" @default.
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- W2026335707 doi "https://doi.org/10.1063/1.105801" @default.
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