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• W2026492183 abstract "Thin films of Y2O3 were grown by molecular-beam epitaxy on silicon aiming at material with adequate crystal quality for use as high-κ gate replacements in future transistors. It was found that Y2O3 grows in single-crystalline form on 4° misoriented Si(001), due to an in-plane alignment of 〈110〉Y2O2 to the silicon dimer direction. The Y2O3 layers exhibit a low degree of mosaicity, a small proportion of twinning and sharp interfaces. This represents a significant improvement compared to material grown on exact silicon surfaces." @default.
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• W2026492183 date "2002-11-04" @default.
• W2026492183 modified "2023-10-12" @default.
• W2026492183 title "High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces" @default.
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• W2026492183 doi "https://doi.org/10.1063/1.1519727" @default.
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