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- W2026565500 abstract "For extreme ultraviolet lithography (EUVL) to become a high volume manufacturing technology for integrated circuit manufacturing, the cleanliness of the system, especially the photomask, is of high importance. For EUV photomasks, which cannot be protected from contamination by the use of a pellicle, an effective and quick cleaning technology needs to be ready in order to maintain wafer throughput. There are challenges to extend current wet cleaning technologies to meet the future needs for damage-free and high efficiency mask cleaning. Accordingly, a unique process for cleaning particulates from surfaces, specifically photomasks as well as wafers, has been evaluated at the University of Illinois Urbana-Champaign. The removal technique utilizes a high density plasma source as well as pulsed substrate biases to provide for removal. Helium is used as the primary gas in the plasma, which under ionization, provides for a large density of helium metastable atoms present in the plasma. These metastable helium atoms have on the order of 20 eV of energy which can transfer to particles on the substrate to be cleaned. When the substrate is under a small flux of ion bombardment, these bonds then remain broken and it is theorized that this allows the particles to be volatilized for their subsequent removal. 100 % particle removal efficiency has been obtained for 30 nm, 80 nm, and 200 nm polystyrene latex particles. In addition, removal rate has been correlated with helium metastable population density determined by optical emission spectroscopy." @default.
- W2026565500 created "2016-06-24" @default.
- W2026565500 creator A5017225409 @default.
- W2026565500 creator A5029248580 @default.
- W2026565500 creator A5047795364 @default.
- W2026565500 creator A5052549090 @default.
- W2026565500 creator A5054859125 @default.
- W2026565500 creator A5077945193 @default.
- W2026565500 creator A5081895779 @default.
- W2026565500 date "2008-11-20" @default.
- W2026565500 modified "2023-09-23" @default.
- W2026565500 title "Removal of particles from lithographic masks through plasma-assisted cleaning by metastable atomic neutralization" @default.
- W2026565500 cites W2035974690 @default.
- W2026565500 cites W2776983113 @default.
- W2026565500 cites W643454364 @default.
- W2026565500 doi "https://doi.org/10.1117/12.804704" @default.
- W2026565500 hasPublicationYear "2008" @default.
- W2026565500 type Work @default.
- W2026565500 sameAs 2026565500 @default.
- W2026565500 citedByCount "4" @default.
- W2026565500 countsByYear W20265655002012 @default.
- W2026565500 crossrefType "proceedings-article" @default.
- W2026565500 hasAuthorship W2026565500A5017225409 @default.
- W2026565500 hasAuthorship W2026565500A5029248580 @default.
- W2026565500 hasAuthorship W2026565500A5047795364 @default.
- W2026565500 hasAuthorship W2026565500A5052549090 @default.
- W2026565500 hasAuthorship W2026565500A5054859125 @default.
- W2026565500 hasAuthorship W2026565500A5077945193 @default.
- W2026565500 hasAuthorship W2026565500A5081895779 @default.
- W2026565500 hasConcept C111368507 @default.
- W2026565500 hasConcept C121332964 @default.
- W2026565500 hasConcept C127313418 @default.
- W2026565500 hasConcept C14737013 @default.
- W2026565500 hasConcept C160671074 @default.
- W2026565500 hasConcept C162996421 @default.
- W2026565500 hasConcept C171250308 @default.
- W2026565500 hasConcept C184779094 @default.
- W2026565500 hasConcept C192562407 @default.
- W2026565500 hasConcept C2777289219 @default.
- W2026565500 hasConcept C2778517922 @default.
- W2026565500 hasConcept C2779227376 @default.
- W2026565500 hasConcept C49040817 @default.
- W2026565500 hasConcept C53524968 @default.
- W2026565500 hasConcept C546029482 @default.
- W2026565500 hasConcept C60581705 @default.
- W2026565500 hasConcept C62520636 @default.
- W2026565500 hasConcept C82706917 @default.
- W2026565500 hasConceptScore W2026565500C111368507 @default.
- W2026565500 hasConceptScore W2026565500C121332964 @default.
- W2026565500 hasConceptScore W2026565500C127313418 @default.
- W2026565500 hasConceptScore W2026565500C14737013 @default.
- W2026565500 hasConceptScore W2026565500C160671074 @default.
- W2026565500 hasConceptScore W2026565500C162996421 @default.
- W2026565500 hasConceptScore W2026565500C171250308 @default.
- W2026565500 hasConceptScore W2026565500C184779094 @default.
- W2026565500 hasConceptScore W2026565500C192562407 @default.
- W2026565500 hasConceptScore W2026565500C2777289219 @default.
- W2026565500 hasConceptScore W2026565500C2778517922 @default.
- W2026565500 hasConceptScore W2026565500C2779227376 @default.
- W2026565500 hasConceptScore W2026565500C49040817 @default.
- W2026565500 hasConceptScore W2026565500C53524968 @default.
- W2026565500 hasConceptScore W2026565500C546029482 @default.
- W2026565500 hasConceptScore W2026565500C60581705 @default.
- W2026565500 hasConceptScore W2026565500C62520636 @default.
- W2026565500 hasConceptScore W2026565500C82706917 @default.
- W2026565500 hasLocation W20265655001 @default.
- W2026565500 hasOpenAccess W2026565500 @default.
- W2026565500 hasPrimaryLocation W20265655001 @default.
- W2026565500 hasRelatedWork W1581407310 @default.
- W2026565500 hasRelatedWork W1964541328 @default.
- W2026565500 hasRelatedWork W1995361396 @default.
- W2026565500 hasRelatedWork W2029123307 @default.
- W2026565500 hasRelatedWork W2032959679 @default.
- W2026565500 hasRelatedWork W2042907435 @default.
- W2026565500 hasRelatedWork W2058198860 @default.
- W2026565500 hasRelatedWork W2081221563 @default.
- W2026565500 hasRelatedWork W2895521660 @default.
- W2026565500 hasRelatedWork W2898026524 @default.
- W2026565500 isParatext "false" @default.
- W2026565500 isRetracted "false" @default.
- W2026565500 magId "2026565500" @default.
- W2026565500 workType "article" @default.