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- W2026665087 abstract "CMOS Image Sensors (CIS) can suffer from yield loss due to metal impurities, which act as generation and recombination centers, giving rise to higher dark currents than the original signal current, resulting in “White Pixel” defects. Metal impurities can enter the silicon surface during processing and diffuse during thermal steps to the vicinity of the photodiode device region. The goal of intrinsic gettering is to trap metallic impurities in a deep buried layer away from the device region. This paper describes a novel process for metals gettering with a cryogenic carbon implant, followed by a high temperature gettering anneal cycle, to form a much deeper buried and distinct defect layer. This technique also provides an effectively recrystallized, defect-free surface region after anneal, which is suitable for the subsequent growth of a defect-free epitaxial film for device fabrication. The physical mechanism involved in the gettering process will be discussed." @default.
- W2026665087 created "2016-06-24" @default.
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- W2026665087 date "2012-01-01" @default.
- W2026665087 modified "2023-09-27" @default.
- W2026665087 title "An effective metals gettering process with a cryogenic carbon implant for CMOS image sensors" @default.
- W2026665087 doi "https://doi.org/10.1063/1.4766539" @default.
- W2026665087 hasPublicationYear "2012" @default.
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