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- W2026698818 abstract "New effects of quasiparticle injection on microwave irradiated Josephson triodes are demonstrated. The device comprises Pb-insulator (Nb <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</inf> )-Nb SIS junction with direct contact of the Nb film to n+-GaAs gate substrate. In this device, the very thin Nb film (300 - 600 Å) as a base electrode of the SIS detector also serves as an acceptor of the quasiparticles injected from GaAs - Nb Sehottky barrier. The emphasis was placed on injections of hot quasiparticles with the energy in excess of 0.5 eV. The zeroth step height of microwave (10 GHz) irradiated Josephson current I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>o</inf> was efficiently modulated by a sufficiently low density quasiparticle injection current I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>inj</inf> (1 - 2 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ), though no sign of change was found in the superconductive gap parameter and the Josephson critical current itself. These characteristic features became less pronounced as the energy of injected quasiparticles was lowered below 50 meV. Though the present experiment is in a preliminary stage, a current amplification (dI <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>o</inf> /dI <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>inj</inf> ) of higher than two has been attained on a test specimen." @default.
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- W2026698818 date "1985-03-01" @default.
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- W2026698818 title "Microwave application of three-terminal Josephson device under hot quasiparticle injection" @default.
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- W2026698818 doi "https://doi.org/10.1109/tmag.1985.1063761" @default.
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