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- W2026765086 abstract "The effects of gate-source (GS) and gate-drain (GD) region passivation on the drain current (ID) collapse in AlGaN∕GaN high-electron-mobility transistors (HEMTs) were studied. Electrical stresses were applied to the GS and GD regions of HEMTs, (1) unpassivated (device A), (2) fully passivated (device B), (3) GD passivated only (device C), and (4) device C with additional full passivation (device D). An increase of ID density and the extrinsic transconductance was observed in devices with full Si3N4 passivation. Due to the increase of gate leakage current by Si3N4 passivation, breakdown voltage decreases. Device A exhibited severe (96%) ID collapse when it was electrically stressed in both the GS and GD regions. Devices C and D have suppressed only 14% of ID collapse after passivation. However, HEMTs with full Si3N4 passivation (device B) have suppressed more than 80% of the ID collapse. Full passivation is required to suppress the ID collapse effectively for AlGaN∕GaN HEMTs. The remaining ID collapse (19%) of device B is affected primarily by bulk/buffer related traps rather than surface related traps." @default.
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- W2026765086 date "2007-04-23" @default.
- W2026765086 modified "2023-10-09" @default.
- W2026765086 title "Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon" @default.
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- W2026765086 doi "https://doi.org/10.1063/1.2730748" @default.
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