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• W2026777766 abstract "Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determined by using Auger electron spectroscopy combined with ion etching. The Mn concentration is higher near the surface and then decreases with depth for films grown at high substrate temperatures. The Mn concentration profile is much more uniform when films are grown using a low substrate temperature. What was unexpectedly found are high levels of oxygen in the low substrate temperature grown thin films." @default.
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• W2026777766 date "2007-04-01" @default.
• W2026777766 modified "2023-09-26" @default.
• W2026777766 title "Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy" @default.
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• W2026777766 doi "https://doi.org/10.1016/j.jcrysgro.2006.11.234" @default.
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