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- W2026781281 abstract "Er in the 0–2 monolayer (ML) range is deposited on Si(111) at room temperature and subsequently annealed at 500°C. The silicide layers obtained in this way are studied by scanning tunneling microscopy and angle-resolved photoemission. Large scale images demonstrate a layer-by-layer growth mode up to 2 ML at 500°C. This is confirmed by monitoring the dangling bond surface state intensity at K̄ of single layer two-dimensional p(1 × 1) silicide in photoemission versus Er coverage. While only monolayer islands are formed up to ∼ 0.9 ML, double layer bulk-like silicide with (√3 × √3)R30° superstructure becomes visible above this coverage. For both single and double layer silicide surfaces atomic resolution could be achieved that indicates a remarkable degree of surface atomic order and very similar surface reconstructions in spite of the different p(1 × 1) and √3 periodicities." @default.
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- W2026781281 date "1996-05-01" @default.
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- W2026781281 title "Initial growth mode of Er silicide on Si(111) by solid phase epitaxy" @default.
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- W2026781281 doi "https://doi.org/10.1016/0039-6028(95)01216-8" @default.
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