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• W2026782553 endingPage "943" @default.
• W2026782553 startingPage "936" @default.
• W2026782553 abstract "Using molecular beam epitaxy, thin films of perovskite-type oxide SrxBa1−xTiO3 (0⩽x⩽1) have been grown epitaxially on Si(0 0 1) substrates. Growth parameters were determined using reflection high energy electron diffraction (RHEED). Observation of RHEED during growth and X-ray diffraction analysis indicates that high quality heteroepitaxy on Si takes place with SrxBa1−xTiO3(0 0 1)//Si(0 0 1) and SrxBa1−xTiO3[0 1 0]//Si[1 1 0]. Extensive atomic simulations have also been carried out to understand the interface structure and give some insights into the initial growth mechanism of the oxide layers on silicon. SrTiO3 layers grown directly on Si were used as the gate dielectric for the fabrication of MOSFET devices. An effective oxide thickness <10 Å has been obtained for a 110 Å thick SrTiO3 dielectric film with interface state density around 6.4×1010/cm2/eV, and the inversion layer carrier mobilities of 220 and 62 cm2/V/s for NMOS and PMOS devices, respectively." @default.
• W2026782553 created "2016-06-24" @default.
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• W2026782553 date "2001-07-01" @default.
• W2026782553 modified "2023-09-26" @default.
• W2026782553 title "Epitaxial oxides on silicon grown by molecular beam epitaxy" @default.
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• W2026782553 doi "https://doi.org/10.1016/s0022-0248(01)00931-9" @default.
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