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- W2026801836 abstract "In this paper, it is shown for the first time that nonlinearity in n-type doped silicon micro-resonators can be reduced by modifying the doping concentration and the resonator alignment to a different crystalline orientation. Spring hardening, a trend opposite to the commonly-observed spring softening, is demonstrated in extensional resonators fabricated on a highly Phosphorus-doped (n~5×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>19</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> ) silicon substrate and oriented in the [100] direction. Therefore, it is hypothesized that for a specific level of doping concentration the nonlinear stiffness coefficients (k <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1</sub> and k <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) can be cancelled and the device will behave linearly for a large range of input power. It is observed that devices fabricated on an Arsenic-doped substrate with lower doping concentration (n~3×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>19</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> ) mechanically fail before they reach bifurcation, a preliminary proof for our hypothesis." @default.
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- W2026801836 date "2013-01-01" @default.
- W2026801836 modified "2023-09-23" @default.
- W2026801836 title "Nonlinearity reduction in silicon resonators by doping and re-orientation" @default.
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- W2026801836 doi "https://doi.org/10.1109/memsys.2013.6474362" @default.
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