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• W2026931631 abstract "Using molecular beam epitaxy (MBE) of ZrSe2 and ZrSe2/MoSe2 heterostructures are grown on crystalline AlN(0 0 0 1)/Si(1 1 1) substrates. Electron diffraction (RHEED) and valence band imaging by angle resolved photoelectron spectroscopy (ARPES) indicate high quality heteroepitaxial growth with very good in-plane crystallographic alignment with the substrate. The workfunction and band offsets are estimated by photoelectron spectroscopy and compared with first principles calculations. The constructed band alignments show that the heterostructure could form the basis for atomically thin p–n junction and 2D vertical tunneling devices." @default.
• W2026931631 created "2016-06-24" @default.
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• W2026931631 date "2015-11-01" @default.
• W2026931631 modified "2023-10-02" @default.
• W2026931631 title "Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates" @default.
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• W2026931631 doi "https://doi.org/10.1016/j.mee.2015.04.113" @default.
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