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- W2026949945 abstract "GaInP/GaAs/GaInP double heterojunction bipolar transistors incorporating dead-space corrected composite collectors were investigated experimentally. The optimized DHBT with a 10-nm lowly doped GaAs spacer and a 5-nm highly doped GaInP spacer has extended the operating range of the collector-emitter voltage, VCE, by maximizing the collector-emitter voltage at the onset of the multiplication, VCE,onset, to 20 V, while minimizing the saturation voltage, VCE,sat (<1 V), and maintaining the nominal breakdown voltage, BVCEO, of the GaInP collector at 25 V. The design incorporating an Al0.11Ga0.89As spacer rather than a GaInP spacer within the lowly doped GaAs-GaInP composite collector demonstrated similar breakdown behavior." @default.
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- W2026949945 date "2007-04-15" @default.
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- W2026949945 title "Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors" @default.
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- W2026949945 doi "https://doi.org/10.1063/1.2721957" @default.
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