Matches in SemOpenAlex for { <https://semopenalex.org/work/W2027123583> ?p ?o ?g. }
- W2027123583 endingPage "33" @default.
- W2027123583 startingPage "27" @default.
- W2027123583 abstract "Semipolar (112̄2) GaN was grown on stripe etched r-plane sapphire substrate by a maskless selective growth method. The initial stage of growth is analyzed by describing the competitive nucleation mechanisms, due to the interplay between kinetics and energetics, on disparate crystallographic planes within the diffusion length of adatoms. The microstructure of the final coalesced semipolar GaN film is revealed by x-ray rocking curve (XRC) analysis and transmission electron microscopy (TEM). XRC analysis yields linewidths between 280 and 550 arcsec for all on-axis and off-axis diffractions. Linewidth broadening factors in dislocated crystals are considered, and a large reduction of stacking fault density can be seen from the measured linewidths as fit to this model. TEM shows a change in the defect characteristics as compared to conventional growth on m-sapphire, filtering of stacking faults and confirmation of the low dislocation density of the final GaN film. The microstructural quality of the film substantiates the possibility of using an inclined basal-plane growth to synthesize non-basal-plane active devices, thus removing the rigid restrictions in contemporary GaN nonpolar and semipolar heteroepitaxy." @default.
- W2027123583 created "2016-06-24" @default.
- W2027123583 creator A5019742720 @default.
- W2027123583 creator A5052918092 @default.
- W2027123583 creator A5053856298 @default.
- W2027123583 creator A5054974714 @default.
- W2027123583 creator A5060345359 @default.
- W2027123583 creator A5061649740 @default.
- W2027123583 creator A5064910563 @default.
- W2027123583 creator A5071773009 @default.
- W2027123583 creator A5078949442 @default.
- W2027123583 date "2012-02-01" @default.
- W2027123583 modified "2023-10-16" @default.
- W2027123583 title "Growth evolution and microstructural characterization of semipolar (112̄2) GaN selectively grown on etched r-plane sapphire" @default.
- W2027123583 cites W1639969666 @default.
- W2027123583 cites W1963820390 @default.
- W2027123583 cites W1970041639 @default.
- W2027123583 cites W1972399528 @default.
- W2027123583 cites W1974291244 @default.
- W2027123583 cites W1976293994 @default.
- W2027123583 cites W1991409761 @default.
- W2027123583 cites W1992636474 @default.
- W2027123583 cites W1993059445 @default.
- W2027123583 cites W2002261342 @default.
- W2027123583 cites W2005845099 @default.
- W2027123583 cites W2009801616 @default.
- W2027123583 cites W2011995294 @default.
- W2027123583 cites W2021055727 @default.
- W2027123583 cites W2023773610 @default.
- W2027123583 cites W2024715645 @default.
- W2027123583 cites W2027514591 @default.
- W2027123583 cites W2028132331 @default.
- W2027123583 cites W2029321601 @default.
- W2027123583 cites W2043074475 @default.
- W2027123583 cites W2050460307 @default.
- W2027123583 cites W2058711626 @default.
- W2027123583 cites W2061637387 @default.
- W2027123583 cites W2063193940 @default.
- W2027123583 cites W2069518466 @default.
- W2027123583 cites W2071355243 @default.
- W2027123583 cites W2074249148 @default.
- W2027123583 cites W2085254880 @default.
- W2027123583 cites W2091533025 @default.
- W2027123583 cites W2092586250 @default.
- W2027123583 cites W2092912262 @default.
- W2027123583 cites W2093108639 @default.
- W2027123583 cites W2129051596 @default.
- W2027123583 cites W4231775764 @default.
- W2027123583 cites W4252600510 @default.
- W2027123583 cites W54483362 @default.
- W2027123583 doi "https://doi.org/10.1016/j.jcrysgro.2011.12.035" @default.
- W2027123583 hasPublicationYear "2012" @default.
- W2027123583 type Work @default.
- W2027123583 sameAs 2027123583 @default.
- W2027123583 citedByCount "20" @default.
- W2027123583 countsByYear W20271235832013 @default.
- W2027123583 countsByYear W20271235832014 @default.
- W2027123583 countsByYear W20271235832015 @default.
- W2027123583 countsByYear W20271235832016 @default.
- W2027123583 countsByYear W20271235832018 @default.
- W2027123583 countsByYear W20271235832019 @default.
- W2027123583 countsByYear W20271235832020 @default.
- W2027123583 countsByYear W20271235832021 @default.
- W2027123583 countsByYear W20271235832023 @default.
- W2027123583 crossrefType "journal-article" @default.
- W2027123583 hasAuthorship W2027123583A5019742720 @default.
- W2027123583 hasAuthorship W2027123583A5052918092 @default.
- W2027123583 hasAuthorship W2027123583A5053856298 @default.
- W2027123583 hasAuthorship W2027123583A5054974714 @default.
- W2027123583 hasAuthorship W2027123583A5060345359 @default.
- W2027123583 hasAuthorship W2027123583A5061649740 @default.
- W2027123583 hasAuthorship W2027123583A5064910563 @default.
- W2027123583 hasAuthorship W2027123583A5071773009 @default.
- W2027123583 hasAuthorship W2027123583A5078949442 @default.
- W2027123583 hasConcept C111368507 @default.
- W2027123583 hasConcept C120665830 @default.
- W2027123583 hasConcept C121332964 @default.
- W2027123583 hasConcept C127313418 @default.
- W2027123583 hasConcept C142181693 @default.
- W2027123583 hasConcept C146088050 @default.
- W2027123583 hasConcept C159122135 @default.
- W2027123583 hasConcept C159985019 @default.
- W2027123583 hasConcept C171250308 @default.
- W2027123583 hasConcept C178790620 @default.
- W2027123583 hasConcept C185592680 @default.
- W2027123583 hasConcept C192562407 @default.
- W2027123583 hasConcept C2777289219 @default.
- W2027123583 hasConcept C2778536302 @default.
- W2027123583 hasConcept C2780064504 @default.
- W2027123583 hasConcept C2780841128 @default.
- W2027123583 hasConcept C33347731 @default.
- W2027123583 hasConcept C49040817 @default.
- W2027123583 hasConcept C520434653 @default.
- W2027123583 hasConcept C61048295 @default.
- W2027123583 hasConcept C69357855 @default.
- W2027123583 hasConcept C8010536 @default.
- W2027123583 hasConcept C87976508 @default.
- W2027123583 hasConcept C97355855 @default.