Matches in SemOpenAlex for { <https://semopenalex.org/work/W2027159280> ?p ?o ?g. }
Showing items 1 to 78 of
78
with 100 items per page.
- W2027159280 endingPage "1906" @default.
- W2027159280 startingPage "1899" @default.
- W2027159280 abstract "X-ray photoelectron spectroscopy (XPS) has been used to study the native oxide structure and surface Fermi level of GaAs exposed to ultraviolet light (UV)/ozone, as well as to monitor changes that occur during thermal desorption of the surface oxide. The XPS results confirm that the surface oxide consists of a mixture of gallium and arsenic oxide phases which desorb at two different temperature ranges: desorption of arsenic oxide phases and oxygen transfer from arsenic to gallium occur at 250–500 °C; and desorption of gallium oxide phases occurs at 550–600 °C. In addition, we found that the surface Fermi level of GaAs below the UV/ozone formed oxide was always at about 0.8 eV from the valence- band maximum (VBM) for n-type substrates and 0.5 eV for p-type substrates. Similar results were found for wet chemically treated and then air exposed GaAs surfaces. However, the surface Fermi levels of both n- and p-type substrates, during the desorption of arsenic oxide in the temperature range of 250–500 °C, moved further away from VBM by as much as 0.4 eV. When the samples were heated to higher temperatures, the surface Fermi level moved back to midgap even before complete desorption of the gallium oxide phases. Fermi level pinning on samples before and after oxide desorption has also been characterized by in situ deposition of 5 nm of silicon nitride on the sample surface in the XPS system and by monitoring the surface potential of the semiconductor with XPS as a function of charging potential on the dielectric. It was found that surfaces both before and after arsenic oxide desorption were pinned within 0.1 eV with a negative voltage of about 2 V on the thin dielectric." @default.
- W2027159280 created "2016-06-24" @default.
- W2027159280 creator A5004027175 @default.
- W2027159280 creator A5020284425 @default.
- W2027159280 creator A5021033484 @default.
- W2027159280 creator A5060329174 @default.
- W2027159280 date "1990-05-01" @default.
- W2027159280 modified "2023-09-27" @default.
- W2027159280 title "Changes in surface composition and Fermi level position during thermal desorption of ultraviolet radiation/ozone formed oxides on GaAs" @default.
- W2027159280 doi "https://doi.org/10.1116/1.576823" @default.
- W2027159280 hasPublicationYear "1990" @default.
- W2027159280 type Work @default.
- W2027159280 sameAs 2027159280 @default.
- W2027159280 citedByCount "20" @default.
- W2027159280 countsByYear W20271592802012 @default.
- W2027159280 countsByYear W20271592802017 @default.
- W2027159280 crossrefType "journal-article" @default.
- W2027159280 hasAuthorship W2027159280A5004027175 @default.
- W2027159280 hasAuthorship W2027159280A5020284425 @default.
- W2027159280 hasAuthorship W2027159280A5021033484 @default.
- W2027159280 hasAuthorship W2027159280A5060329174 @default.
- W2027159280 hasConcept C113196181 @default.
- W2027159280 hasConcept C121332964 @default.
- W2027159280 hasConcept C127413603 @default.
- W2027159280 hasConcept C147120987 @default.
- W2027159280 hasConcept C147789679 @default.
- W2027159280 hasConcept C150394285 @default.
- W2027159280 hasConcept C155916967 @default.
- W2027159280 hasConcept C162711632 @default.
- W2027159280 hasConcept C175708663 @default.
- W2027159280 hasConcept C185592680 @default.
- W2027159280 hasConcept C191897082 @default.
- W2027159280 hasConcept C192562407 @default.
- W2027159280 hasConcept C2779851234 @default.
- W2027159280 hasConcept C2781059571 @default.
- W2027159280 hasConcept C40636707 @default.
- W2027159280 hasConcept C42360764 @default.
- W2027159280 hasConcept C43617362 @default.
- W2027159280 hasConcept C62520636 @default.
- W2027159280 hasConceptScore W2027159280C113196181 @default.
- W2027159280 hasConceptScore W2027159280C121332964 @default.
- W2027159280 hasConceptScore W2027159280C127413603 @default.
- W2027159280 hasConceptScore W2027159280C147120987 @default.
- W2027159280 hasConceptScore W2027159280C147789679 @default.
- W2027159280 hasConceptScore W2027159280C150394285 @default.
- W2027159280 hasConceptScore W2027159280C155916967 @default.
- W2027159280 hasConceptScore W2027159280C162711632 @default.
- W2027159280 hasConceptScore W2027159280C175708663 @default.
- W2027159280 hasConceptScore W2027159280C185592680 @default.
- W2027159280 hasConceptScore W2027159280C191897082 @default.
- W2027159280 hasConceptScore W2027159280C192562407 @default.
- W2027159280 hasConceptScore W2027159280C2779851234 @default.
- W2027159280 hasConceptScore W2027159280C2781059571 @default.
- W2027159280 hasConceptScore W2027159280C40636707 @default.
- W2027159280 hasConceptScore W2027159280C42360764 @default.
- W2027159280 hasConceptScore W2027159280C43617362 @default.
- W2027159280 hasConceptScore W2027159280C62520636 @default.
- W2027159280 hasIssue "3" @default.
- W2027159280 hasLocation W20271592801 @default.
- W2027159280 hasOpenAccess W2027159280 @default.
- W2027159280 hasPrimaryLocation W20271592801 @default.
- W2027159280 hasRelatedWork W1982864011 @default.
- W2027159280 hasRelatedWork W1984522970 @default.
- W2027159280 hasRelatedWork W1991644038 @default.
- W2027159280 hasRelatedWork W1999267435 @default.
- W2027159280 hasRelatedWork W2034334191 @default.
- W2027159280 hasRelatedWork W2046903578 @default.
- W2027159280 hasRelatedWork W2071355068 @default.
- W2027159280 hasRelatedWork W2078212791 @default.
- W2027159280 hasRelatedWork W2094332151 @default.
- W2027159280 hasRelatedWork W2095446686 @default.
- W2027159280 hasVolume "8" @default.
- W2027159280 isParatext "false" @default.
- W2027159280 isRetracted "false" @default.
- W2027159280 magId "2027159280" @default.
- W2027159280 workType "article" @default.