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- W2027341219 abstract "Undoped, S-doped and Fe-doped InP crystals with diameter up to 4-inch have been pulled in 〈1 0 0〉-direction under P-rich condition by a rapid P-injection in situ synthesis liquid encapsulated Czochralski (LEC) method. High speed photoluminescence mapping, etch-pit density (EPD) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. Dislocations and electrical homogeneity of these samples are investigated and compared. By controlling the thermal field and the solid–liquid interface shape, 4-inch low-EPD InP single crystals have been successfully grown by the rapid P-injection synthesis LEC method. The EPD across the wafer of the ingots is less than 5×104 cm−2. Cluster defects with a pore center are observed in the P-rich LEC grown InP ingots. These defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. The uniformity of the PL intensity across the wafer is influenced by these defects." @default.
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- W2027341219 date "2004-03-01" @default.
- W2027341219 modified "2023-09-30" @default.
- W2027341219 title "Study on the perfection of in situ P-injection synthesis LEC-InP single crystals" @default.
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- W2027341219 doi "https://doi.org/10.1016/j.jcrysgro.2003.12.042" @default.
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