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- W2027367155 abstract "Abstract Gadolinium nitride films have been deposited on Si(100) using a plasma-enhanced ALD (PEALD) based process. The deposition was carried out using tris(methylcyclopentadienyl)gadolinium {Gd(MeCp) 3 } and remote nitrogen plasma, separated by argon pulses. Films were deposited at temperatures between 150 and 300 °C and capped with tantalum nitride to prevent post-deposition oxidation. Film composition was initially assessed using EDX and selected samples were subsequently depth profiled using medium energy ion scattering (MEIS) or AES. X-ray diffraction appears to show that the films are effectively amorphous. Films deposited at 200 °C were found to have a Gd:N ratio close to 1:1 and a low oxygen incorporation (∼5%). Although the growth was affected by partial thermal decomposition of the Gd(MeCp) 3 , it was still possible to obtain smooth (Ra.=∼0.7 nm) films with good thickness uniformity (97%). Less successful attempts to deposit gadolinium nitride using thermal ALD with ammonia or mono-methyl-hydrazine are also reported." @default.
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- W2027367155 date "2012-01-01" @default.
- W2027367155 modified "2023-10-18" @default.
- W2027367155 title "Gadolinium nitride films deposited using a PEALD based process" @default.
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- W2027367155 doi "https://doi.org/10.1016/j.jcrysgro.2011.10.049" @default.
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