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- W2027432818 abstract "Tantalum pentoxide (Ta2O5) deposited by pulsed DC magnetron sputtering technique as the gate dielectric for 4H-SiC based metal-insulator-semiconductor (MIS) structure has been investigated. A rectifying current–voltage characteristic was observed, with the injection of current occurred when a positive DC bias was applied to the gate electrode with respect to the n type 4H-SiC substrate. This undesirable behavior is attributed to the relatively small band gap of Ta2O5 of around 4.3 eV, resulting in a small band offset between the 4H-SiC and Ta2O5. To overcome this problem, a thin thermal silicon oxide layer was introduced between Ta2O5 and 4H-SiC. This has substantially reduced the leakage current through the MIS structure. Further improvement was obtained by annealing the Ta2O5 at 900 °C in oxygen. The annealing has also reduced the effective charge in the dielectric film, as deduced from high frequency C–V measurements of the Ta2O5/SiO2/4H-SiC capacitors." @default.
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- W2027432818 date "2006-01-01" @default.
- W2027432818 modified "2023-09-27" @default.
- W2027432818 title "Investigation of Ta2O5/SiO2/4H-SiC MIS capacitors" @default.
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- W2027432818 doi "https://doi.org/10.1016/j.mee.2005.10.025" @default.
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