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• W2027436819 abstract "GaAs-based solar cells containing stacked layers of nanostructured type II GaSb quantum ring solar cells are reported which show significantly enhanced infrared photo-response extending out to 1400 nm. The ring formation reduces the net strain energy associated with the large lattice mismatch making it possible to stack multi-layers without the need for strain balancing. The (1 sun) short-circuit current for a 10 layer sample is enhanced by ∼6% compared to a GaAs control cell. The corresponding open-circuit voltage of 0.6 V is close to the theoretical maximum expected from such structures." @default.
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• W2027436819 date "2012-12-03" @default.
• W2027436819 modified "2023-09-26" @default.
• W2027436819 title "Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells" @default.
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• W2027436819 doi "https://doi.org/10.1063/1.4768942" @default.
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