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• W2027458077 abstract "Amorphous silicon nitride films a:SiN x were prepared by low pressure chemical vapor deposition (LPCVD) from disilane ( Si 2 H 6 ) and ammonia ( NH 3 ). Most of the depositions were performed at 600° C with various NH 3 /Si 2 H 6 gas ratios ranging from 4 to 50. Different deposits with composition ( x = N/Si) ranging from silicon-rich to stoichiometric silicon nitride were characterized by means of infrared spectroscopy (FTIR), ellipsometry, electron energy loss spectroscopy (EELS), and their structure analysed by transmission electron microscopy (TEM). Transmission infrared measurements showed low hydrogen content (<4.7%) in all the deposited films. Changes in atomic ratio ( x = N/Si) and density of the films were correlated with their refractive index and discussed." @default.
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• W2027458077 date "1995-04-01" @default.
• W2027458077 modified "2023-10-04" @default.
• W2027458077 title "Characterization of Chemically Vapor Deposited Silicon Nitride Films from Disilane and Ammonia" @default.
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• W2027458077 doi "https://doi.org/10.1143/jjap.34.l437" @default.
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