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- W2027479201 abstract "Abstract The introduction of a silicon–germanium epitaxial layer in the base of a bipolar transistor brings about significant gains in speed. SiGe heterojunction bipolar transistors (HBTs) are now challenging GaAs in its traditional stronghold of wireless communications. But this new process step introduces new requirements for control of the Ge content and profile. X-ray diffraction (XRD) has been extensively used to characterize SiGe during it's research and development phase but, until now, it was considered too difficult and time consuming for use in a production environment. Recent advances in analytical software, however, allow fast and reliable extraction of layer thickness, germanium content and grading profile. XRD process control tools are currently being installed in a number of SiGe fab lines." @default.
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- W2027479201 date "2001-02-01" @default.
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- W2027479201 title "Process control of Si/SiGe heterostructures by X-ray diffraction" @default.
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