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- W2027492916 abstract "Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated." @default.
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- W2027492916 date "1980-08-01" @default.
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- W2027492916 title "Hydrogenation of transistors fabricated in polycrystalline-silicon films" @default.
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- W2027492916 doi "https://doi.org/10.1109/edl.1980.25272" @default.
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