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- W2027698889 abstract "The transient response of high-resistivity long-base low-lifetime p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> -n-n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> silicon diodes was examined experimentally. The diodes were doped with gold in order to reduce the minority carrier lifetime. Voltage oscillations were observed at different current levels. A large inductive effect was shown to exist when the diode was forward biased in a negative resistance region of the dc voltage-current characteristics." @default.
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- W2027698889 date "1968-11-01" @default.
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- W2027698889 title "Forward transient characteristics of gold-doped silicon p+-n-n+diodes" @default.
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- W2027698889 doi "https://doi.org/10.1109/t-ed.1968.16526" @default.
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