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• W2027720954 endingPage "15630" @default.
• W2027720954 startingPage "15619" @default.
• W2027720954 abstract "The temperature and electric-field dependence of the forward bias current and the electroluminescence (EL) in hydrogenated amorphous silicon (a-Si:H) p-i-n and n-i-p diodes have been studied. Both the current and the EL efficiency temperature dependence show three regions depending on either hopping-controlled or multiple-trapping or ballistic transport mechanisms. Comparing the thermalization-controlled geminate recombination processes of photoluminescence to the features of EL, the differences can be explained by transport-controlled nongeminate recombination in trap-rich materials." @default.
• W2027720954 created "2016-06-24" @default.
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• W2027720954 date "1997-06-15" @default.
• W2027720954 modified "2023-09-27" @default.
• W2027720954 title "Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination" @default.
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• W2027720954 doi "https://doi.org/10.1103/physrevb.55.15619" @default.
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