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• W2027721400 abstract "Aluminium nitride (100) thin films, grown on Si(100) by reactive laser ablation at low substrate temperature, have been investigated by many methods. Results show the AlN(100) films are dense and stable, with excellent (100) growth orientation and low residual stress. The intensity of the (100) diffraction peak correlates with deposition temperature and the residual stress is proportional to nitrogen pressure, but inversely proportional to discharge voltage. AlN(100) thin films retain thermal stability up to 500°C on annealing in an oxygen atmosphere. The etch rates of AlN(100) films in 85% and 0.5M NaOH increase with increasing solution temperature, and the activation energies in NaOH and H 3 PO 4 are 36.3 kJ/mol and 23.2 kJ/mol, respectively." @default.
• W2027721400 created "2016-06-24" @default.
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• W2027721400 date "2001-10-20" @default.
• W2027721400 modified "2023-09-27" @default.
• W2027721400 title "PROPERTIES OF AlN(100) THIN FILMS PREPARED BY REACTIVE LASER ABLATION" @default.
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• W2027721400 doi "https://doi.org/10.1142/s0217984901002981" @default.
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