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• W2027852022 abstract "physica status solidi (b)Volume 139, Issue 1 p. K25-K30 Short Note Theoretical Analysis of the Carrier Effective Mass in Inversion Layers on II-VI Semiconductors K. P. Ghatak, K. P. Ghatak Department of Physics, University College of Science and Technology, Calcutta Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta, 1 Girish Vidyaratna Lane, Calcutta 700 009, India.Search for more papers by this authorN. Chatterjee, N. Chatterjee Department of Physics, University College of Science and Technology, Calcutta Search for more papers by this authorM. Mondal, M. Mondal Department of Physics, University College of Science and Technology, Calcutta Search for more papers by this author K. P. Ghatak, K. P. Ghatak Department of Physics, University College of Science and Technology, Calcutta Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta, 1 Girish Vidyaratna Lane, Calcutta 700 009, India.Search for more papers by this authorN. Chatterjee, N. Chatterjee Department of Physics, University College of Science and Technology, Calcutta Search for more papers by this authorM. Mondal, M. Mondal Department of Physics, University College of Science and Technology, Calcutta Search for more papers by this author First published: 1 January 1987 https://doi.org/10.1002/pssb.2221390141Citations: 17 92, Acharya Prafulla Chandra Road, Calcutta 700 009, India. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 S. Adachi, J. appl. Phys. 58, R11 (1985). 2 R. Dornhaus and G. Nimtz, Springer Tracts in mod. Phys. 78, 1 (1976). 3 W. Zawadzki, in: Handbook of Semiconductors, Vol. 1, Ed. W. Paul, North-Holland Publ. Co., Amsterdam 1982 (p. 719). 4 I. M. Tsidilkovskii, Cand. Thesis, Leningrad University, 1955. 5 F. G. Bass and I. M. Tsidilkovskii, Izv. Akad. Nauk Azerb. SSR No. 10, 3 (1956). 6 W. Zawadzki, Adv. Phys. 23, 435 (1974). 7 I. M. Belovolov, N. B. Brandt, V. S. Vavilov and I. Ponomarev, Zh. eksper. teor. Fiz. 73, 721 (1977). 8 P. R. Wallace, phys. stat. sol. (b) 92, 49 (1979). 9 A. N. Chakravarti, K. P. Ghatak, A. Dhar and K. K. Ghosh, Czech. J. Phys. B33, 65 (1983). 10 M. Singh, P. R. Wallace, S. P. Jog and E. Arushanev, J. Phys. Chem. Solids 45, 409 (1984). 11 V. Rossler, Solid State Commun. 49, 943 (1984). 12 M. Mondal and K. P. Ghatak, phys. stat. sol. (b) 123, K143 (1984). 13 F. D. Madarsaz, F. Zmubowicz and J. R. Mebath, J. appl. Phys. 48, 361 (1985). 14 H. Kildal, Phys. Rev. B 10, 5082 (1974). 15 M. Mondal and K. P. Ghatak, phys. stat. sol. (b) 129, 745 (1985). 16 T. Ando, A. B. Fowler and F. Stern, Rev. mod. Phys. 54, 437 (1982). 17 M. Mondal and K. P. Ghatak, phys. stat. sol. (a) 93, 377 (1986). 18 S. Wang, Solid State Electronics, McGraw-Hill Co., New York 1966 (p. 188), and references cited therein. 19 J. J. Hopfield, J. appl. Phys. 32, 2277 (1961), and references cited therein. 20 G. Paasch, T. Fiedler, M. Kolář and I. Bartoš, phys. stat. sol. (b) 118, 641 (1983). 21 J. S. Blakemore, Semiconductor Statistics, Pergamon Press, London 1962. Citing Literature Volume139, Issue11 January 1987Pages K25-K30 ReferencesRelatedInformation" @default.
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