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- W2027854211 abstract "Thin GaAs films were heteroepitaxially grown on Si substrates by mixture beams of 60 eV ions and neutral molecules without prebaking at a high temperature or intermediate layers. Surfaces of the Si substrates were amorphized by collision of the low-energy ions. The amorphous Si surface layers were automatically inserted between Si substrates and GaAs films and they served as a buffer layer to relieve strain due to large lattice mismatch and difference in coefficients of linear expansion between GaAs films and Si substrates." @default.
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- W2027854211 date "1992-09-01" @default.
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- W2027854211 title "GaAs Films Heteroepitaxially Grown on Si Substrates by Mixture Beams of Ions and Molecules" @default.
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- W2027854211 doi "https://doi.org/10.1143/jjap.31.2959" @default.
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