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• W2027861919 endingPage "5017" @default.
• W2027861919 startingPage "5010" @default.
• W2027861919 abstract "The changes in the real index of refraction and the optical absorption for conduction intersubband transitions in AlxGa1−xAs/GaAs/AlxGa1−xAs quantum wells are examined as a function of the carrier density. Various values for the input optical field and quantum well width are considered in the calculations. The linear contribution due to χ(1) as well as the nonlinear contribution from χ(3) is included. The relationship of the results to device applications such as waveguides and optical modulators is discussed." @default.
• W2027861919 created "2016-06-24" @default.
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• W2027861919 date "1991-11-01" @default.
• W2027861919 modified "2023-09-24" @default.
• W2027861919 title "Free carrier induced changes in the absorption and refractive index for intersubband optical transitions in Al_<i>x</i>Ga_1−<i>x</i>As/GaAs/Al_<i>x</i>Ga_1−<i>x</i>As quantum wells" @default.
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• W2027861919 doi "https://doi.org/10.1063/1.349005" @default.
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