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• W2028004032 abstract "In this article, thermally stable Ni germanide using palladium (Pd) incorporation is proposed for high performance germanium metal-oxide-semiconductor field-effect transistors, and a microstructural analysis of the Ni germanide is performed in depth. The proposed Pd/Ni/TiN structure exhibited a stable sheet resistance despite high temperature postgermanidation annealing of up to for 30 min. The cause of the improved thermal stability is determined to be caused by the pileup of Pd atoms at the bottom region of NiGe, which resulted in the retardation of NiGe agglomeration by the formation of PdGe or NiPdGe there." @default.
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• W2028004032 date "2009-01-01" @default.
• W2028004032 modified "2023-09-26" @default.
• W2028004032 title "Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation" @default.
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• W2028004032 doi "https://doi.org/10.1149/1.3202407" @default.
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