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- W2028005895 abstract "The internal friction of single crystal silicon and germanium at 100 kc/s shows a relaxation peak near 0.56 of the melting temperature. The peak is electronic in origin and the relaxation time is the carrier lifetime. At the peak temperature, in many of the specimens measured, intrinsic recombination and intrinsic conduction are the dominant mechanisms, and the peak height at any given frequency depends only upon specimen orientation. If impurities are introduced so that the extrinsic lifetime becomes less than the intrinsic lifetime at the peak temperature, then the peak height is reduced. From the shape of the electronic peak and from its shift with frequency, the temperature variation of both intrinsic and extrinsic lifetime may be deduced. The activation energy of recombination of carriers in silicon appears to be 1.45 eV and in germanium about 1.15 eV, although it is difficult to reconcile these values with existing theories. The height of the peak gives the deformation potential constant; in silicon it is 2 3 eV and in germanium 6.5 eV per unit dilatational strain, which values are of the same order as those derived from hydrostatic measurements. In silicon crystals containing oxygen, having a [111] vibration axis, an internal friction peak appears at 1030°C (100 kc/s). The peak is not present if the silicon is oxygen free or has a [100] axis, and can be attributed to the movement of dissolved oxygen. The activation energy is 2.55 eV. The peak height varies, but in most crystals grown from silica crucibles the maximum logarithmic decrement is of the order 3 × 10−4. In germanium a small peak appears in some specimens at 770°C (100 kc/s). No reduction of its height has been observed on annealing, and its shape is consistent with that of impurity relaxation." @default.
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- W2028005895 title "Internal Friction in Germanium and Silicon I: Electron and Impurity Relaxation" @default.
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- W2028005895 doi "https://doi.org/10.1088/0370-1328/76/3/309" @default.
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