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- W2028012929 abstract "An AlAs buffer layer was successfully utilized in a 0.25-µm-gate pseudomorphic doped channel field effect transistor for the first time by growing a high quality p-AlAs layer by metalorganic chemical vapor deposition that attenuated the commonly observed roughness-induced degradation. Compared with a device containing a thick GaAs buffer layer alone, the RF g m / g DS ratio and f max in this device were increased by 42% to 39 and by 19% to 160 GHz, respectively, at the expense of a slight decrease in g m and f T . As a result of the reduced leakage conduction through the buffer layer at high temperatures, the fabricated doped channel FET with the p-AlAs buffer layer was completely pinched off and it exhibited excellent DC current–voltage characteristics even at elevated temperatures up to 200°C." @default.
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- W2028012929 date "2000-05-01" @default.
- W2028012929 modified "2023-10-17" @default.
- W2028012929 title "AlGaAs/InGaAs Pseudomorphic Doped Channel Field Effect Transistor with A P-AlAs Buffer Layer Grown by Metalorganic Chemical Vapor Deposition" @default.
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- W2028012929 doi "https://doi.org/10.1143/jjap.39.2508" @default.
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