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- W2028032010 abstract "In this paper we shall describe a new VUV photo/reduced plasma enhanced oxidation system to grow thin (<50 Å) silicon dioxide films at low temperatures (< 400 °C). The wavelength dependence of the oxidation rate has been investigated. Since the photon energies used were greater than the silicon dioxide band gap, their effect on the flat band voltage and fixed oxide charge has also been studied using previously characterised thermally grown oxides." @default.
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- W2028032010 title "Low temperature VUV enhanced growth of thin silicon dioxide films" @default.
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- W2028032010 doi "https://doi.org/10.1016/0169-4332(90)90169-z" @default.
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