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• W2028053691 abstract "The article shows the most important experimental results describing the properties of nitride layers on GaN single crystals. The layers were grown using metal-organic chemical vapor deposition (MOCVD). The growth was monitored by in-situ laser reflectometry. The layers contain very small dislocation density of about 10 to 10<SUP>3</SUP> cm<SUP>$min2</SUP> (the same as in GaN substrates). Morphology and crystallographic quality was examined using atomic force microscopy and X-ray diffraction. The layers have excellent photo luminescent properties which have a direct impact on the optoelectronic device properties." @default.
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• W2028053691 date "2001-04-17" @default.
• W2028053691 modified "2023-10-05" @default.
• W2028053691 title "Epitaxy on GaN bulk crystals" @default.
• W2028053691 doi "https://doi.org/10.1117/12.425412" @default.
• W2028053691 hasPublicationYear "2001" @default.
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