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• W2028076676 abstract "An atmosphere highly diluted with hydrogen is essential to increase the crystal fraction during formation of hydrogenated nano-crystalline (nc) or micro-crystalline (μc) silicon thin films via chemical vapor deposition (CVD). This hydrogen-rich process, however, hinders the ability for the material to find adequate use in micro-electronic devices due to contamination that results in oxygen-related problems such as donor-like doping, defect creation, or passivation. The use of neutral beam assisted chemical vapor deposition (NBaCVD), with a low hydrogen ratio (R = H2/SiH4) of 4, successfully deposits a highly-crystallized nc-silicon (HC nc-Si) thin film (TF) at near room temperature (<80 °C) and effectively reduces oxygen contamination by as much as 100 times when compared to conventional plasma enhanced CVD. During the formation of HC nc-Si TF via NBaCVD, energetic hydrogen atoms directly react with oxygen atoms near the surface of the nc-Si TF and remove the oxygen impurities. This is a completely different mechanism from the hydrogen-enhanced oxygen diffusion model. This technology meets the recent requirements of a high deposition rate and low temperature necessary for flexible electronics." @default.
• W2028076676 created "2016-06-24" @default.
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• W2028076676 date "2014-06-01" @default.
• W2028076676 modified "2023-09-26" @default.
• W2028076676 title "Precise control over oxygen impurities in nano-crystalline silicon thin film processed with a low hydrogen dilution gas system at near room temperature" @default.
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• W2028076676 doi "https://doi.org/10.1016/j.cap.2014.03.023" @default.
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