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- W2028094221 abstract "This paper presents the development of a test circuit for unified testing of nominal and overload working conditions of new generation silicon-carbide power transistors and diodes, of diverse technologies and different voltage classes. The circuit is presently suitable for characterisation up to 1 kV and enables for the investigation of the device performance at different case-temperature values, as well as for the analysis of electro-thermal mismatches between devices operated in parallel. (5 pages)" @default.
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- W2028094221 date "2012-01-01" @default.
- W2028094221 modified "2023-09-30" @default.
- W2028094221 title "Performance and robustness testing of SiC power devices" @default.
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- W2028094221 doi "https://doi.org/10.1049/cp.2012.0152" @default.
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