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- W2028103479 abstract "The plasmochemical etching of silicon in fluorine ambient was considered. The desorption activation energy for an SiF4 molecule was evaluated using an experimentally measured dependence of etching rate on concentration of fluorine atoms. It was found that the desorption activation energy of SiF4 molecules is equal to Ed=(0.66±0.03) eV. This corresponds to a value of the mean lifetime of adsorbed molecules on the surface of τ=54 ms at temperature T=296 K." @default.
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- W2028103479 date "2002-10-01" @default.
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- W2028103479 title "Evaluation of desorption activation energy of SiF4 molecules" @default.
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- W2028103479 doi "https://doi.org/10.1016/s0042-207x(02)00278-6" @default.
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