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• W2028140048 abstract "We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously lattice-matched to GaN in both in-plane directions. We study the influence of temperature on indium incorporation and obtain nearly-lattice-matched Al_{0.81}In_{0.19}N at a growth temperature of 760^{o}C. We outline a procedure to check in-plane lattice mismatch using high resolution x-ray diffraction, and evaluate the strain and critical thickness. Polarization-resolved optical transmission measurements of the Al_{0.81}In_{0.19}N epilayer reveal a difference in bandgap of ~140 meV between (electric field) E_parallel_c [0001]-axis and E_perpendicular_c conditions with room-temperature photoluminescence peaked at 3.38 eV strongly polarized with E_parallel_c, in good agreement with strain-dependent band-structure calculations." @default.
• W2028140048 created "2016-06-24" @default.
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• W2028140048 date "2010-07-01" @default.
• W2028140048 modified "2023-09-27" @default.
• W2028140048 title "Optimization of a-plane InN grown via MOVPE on a-plane GaN buffer layers on r-plane sapphire" @default.
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• W2028140048 doi "https://doi.org/10.1016/j.jcrysgro.2010.03.042" @default.
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