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• W2028147913 abstract "Amorphous silicon carbonitride films were produced by remote hydrogen plasma CVD (RP-CVD) from Tris(dimethylamino)silane precursor. The effect of substrate temperature (TS) on the kinetics of RP-CVD, chemical composition, structure, surface morphology, and properties of resulting films is reported. The TS dependence of film growth rate imply that RP-CVD is an adsorption-controlled process. The increase of TS from 30 to 400 °C causes the elimination of organic moieties from the film and the formation of SiC and SiN network structure. The structure–property relationships were determined. The films deposited at TS = 300 °C appear to be dense materials exhibiting very small surface roughness, high hardness, and an extremely low friction coefficient. They seem to be suitable protective coatings for metal surfaces to increase their wear strength." @default.
• W2028147913 created "2016-06-24" @default.
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• W2028147913 date "2011-04-12" @default.
• W2028147913 modified "2023-09-26" @default.
• W2028147913 title "Remote Hydrogen Microwave Plasma Chemical Vapor Deposition of Amorphous Silicon Carbonitride (a-SiCN) Coatings Derived From Tris(dimethylamino)Silane" @default.
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• W2028147913 doi "https://doi.org/10.1002/ppap.201000203" @default.
• W2028147913 hasPublicationYear "2011" @default.
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