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• W2028188045 startingPage "023507" @default.
• W2028188045 abstract "β-Ga2O3 epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing." @default.
• W2028188045 created "2016-06-24" @default.
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• W2028188045 date "2014-07-14" @default.
• W2028188045 modified "2023-10-16" @default.
• W2028188045 title "Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in <i>β-</i>Ga₂O₃ solar-blind ultraviolet photodetectors" @default.
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• W2028188045 doi "https://doi.org/10.1063/1.4890524" @default.
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