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- W2028202225 abstract "We report on the growth of SiGe/Si heterostructures in a commercial chemical vapor deposition cold-wall vertical reactor using SiH4 and GeH4 gas precursors, and we discuss their structural quality. The machine is versatile as it operates in a wide range of temperature and pressure, allowing both the ultra high vacuum and a low-pressure-like regime. In the two growth modes, the Si and SiGe deposition rates and the Ge fraction are calibrated as a function of the temperature and the hydrides partial pressures. The LP-CVD regime is appropriate for the realization of thick gradually relaxed Si0.75Ge0.25/Si pseudo-substrates. The role of the grading rate (5–20% Ge/μm) on the density of threading dislocations and the surface roughness is discussed. Seven-period Si0.70Ge0.30/Si superlattices were grown by UHV-CVD to study the interfacial chemical abruptness and morphological roughness by means of X-ray diffraction, rutherford backscattering and transmission electron microscopy techniques. Results are strongly dependent on the growth temperature in the 575–625°C range." @default.
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- W2028202225 date "2000-06-01" @default.
- W2028202225 modified "2023-10-18" @default.
- W2028202225 title "Chemical vapor deposition of silicon–germanium heterostructures" @default.
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- W2028202225 doi "https://doi.org/10.1016/s0022-0248(00)00429-2" @default.
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