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- W2028239833 abstract "Abstract The solar power conversion efficiency of compositionally graded In x Ga 1− x N solar cells was simulated using a finite element approach. Incorporating a compositionally graded region on the InGaN side of a p-GaN/n-In x Ga 1− x N heterojunction removes a barrier for hole transport into GaN and increases the cell efficiency. The design also avoids many of the problems found to date in homojunction cells as no p-type high-In content region is required. Simulations predict 28.9% efficiency for a p-GaN/n-In x Ga 1− x N/n-In 0.5 Ga 0.5 N/p-Si/n-Si tandem structure using realistic material parameters. The thickness and doping concentration of the graded region was found to substantially affect the performance of the cells." @default.
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- W2028239833 date "2010-03-01" @default.
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- W2028239833 title "Finite element simulations of compositionally graded InGaN solar cells" @default.
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- W2028239833 doi "https://doi.org/10.1016/j.solmat.2009.11.010" @default.
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