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- W2028263604 abstract "A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In0.19Ga0.81N showed the lowest specific contact resistance of 1.1×10−6 Ω cm2. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN." @default.
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- W2028263604 date "2001-10-15" @default.
- W2028263604 modified "2023-10-14" @default.
- W2028263604 title "Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer" @default.
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- W2028263604 doi "https://doi.org/10.1063/1.1410336" @default.
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