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- W2028295598 abstract "A very low-resistance ohmic contact of GaN was successfully fabricated employing XeCl excimer laser irradiation on a 70 nm thick ion beam sputtered silicon layer on undoped GaN. Secondary-ion mass spectroscopy analysis shows that a high silicon doping concentration has been successfully located in the surface of GaN. The ohmic contact resistance of the proposed process was while that of was measured in the conventional GaN ohmic contact. A Schottky diode employing the proposed ohmic contact was fabricated and the forward current increased by 24.5% due to the reduced ohmic contact resistance." @default.
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- W2028295598 date "2005-01-01" @default.
- W2028295598 modified "2023-10-18" @default.
- W2028295598 title "Low-Resistance Ti∕Al∕Ni∕Au Ohmic Contact of GaN Employing Silicon Diffusion by XeCl Excimer Laser Irradiation" @default.
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- W2028295598 doi "https://doi.org/10.1149/1.1895266" @default.
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