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- W2028295790 abstract "At a given thickness of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , atomic layer deposited (ALD) TaN metal-gates showed higher equivalent oxide thickness (EOT) and flat-band-voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fb</sub> ) shift compared to physical vapor deposited (PVD) TaSiN after annealing at 750degC for 30 min in N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . TEM data revealed the growth of a thicker interfacial oxide of 1.7 nm for TaN compared to 0.9 nm for TaSiN. In addition, TaN showed higher effective workfunction of 4.7 eV compared to 4.4 eV for TaSiN. However, both TaN and TaSiN exhibited V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fb</sub> roll-off when the HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thickness was decreased below 4 nm. XPS measurements showed the presence of 6 atom% oxygen in TaN, whereas no significant amount of oxygen was detected in TaSiN. Electrical results are discussed in terms of the oxygen content in metal-gates and oxygen vacancy in HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ." @default.
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- W2028295790 date "2009-04-01" @default.
- W2028295790 modified "2023-09-27" @default.
- W2028295790 title "EOT, Workfunction, and Vfb Roll-Off in HfO2/Metal Gate Stacks" @default.
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- W2028295790 doi "https://doi.org/10.1109/wmed.2009.4816138" @default.
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