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- W2028306321 abstract "Lead- and bismuth-free Ba(Ti1 − x Zr x )O3 (BTZ) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by the chemical solution deposition (CSD) process. The single phase BTZ thin films were obtained at 650°C by conventional process and the control of lattice parameter a was possible by Zr substitution. As the D-E hysteresis loops and J-V characteristics depended on the precipitates on film surface, the fabrication process was reexamined by 2-step sintering process. Consequently the decreasing of first sintering time was able to prevent the precipitates, and the larger grain of about 40–50 nm were obtained by additional sintering for 2 hour." @default.
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- W2028306321 date "2004-01-01" @default.
- W2028306321 modified "2023-10-16" @default.
- W2028306321 title "Fabrication and Characterization of Ba(Ti,Zr)O3 Thin Films Through the Chemical Solution Deposition Process" @default.
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- W2028306321 doi "https://doi.org/10.1080/10584580490894500" @default.
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