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• W2028436699 abstract "We propose a quantitative electrostatic theory for a gate-confined narrow channel of the two-dimensional electron gas in the integer and fractional quantum Hall regimes. Our theory is based on the zero-magnetic-field electrostatic solution, which yields a domelike profile of electron density. This solution is valid when the width of the channel is larger than the Bohr radius in the semiconductor. In a strong magnetic field H, alternating strips of compressible and incompressible liquids are formed in the channel. When the central strip in the channel is incompressible, the conductance G is quantized in units of ${mathit{e}}^{2}$/2ensuremath{pi}ensuremath{Elzxh}, i.e., there are plateaus in G as a function of the magnetic field H. However, we have found that in a much wider range of magnetic fields there is a compressible strip in the center of the channel. We also argue, based on the exact solution in a simple case, that conductance, in units of ${mathit{e}}^{2}$/2ensuremath{pi}ensuremath{Elzxh}, of a short and ``clean'' channel is given by the filling factor in the center of the channel, allowing us to calculate conductance as a function of magnetic field and gate voltage, including both the positions of the plateaus and the rises between them. We apply our theory to a quantum point contact, which is an experimental implementation of a narrow channel." @default.
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• W2028436699 date "1993-05-15" @default.
• W2028436699 modified "2023-10-17" @default.
• W2028436699 title "Ballistic conductance of interacting electrons in the quantum Hall regime" @default.
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• W2028436699 doi "https://doi.org/10.1103/physrevb.47.12605" @default.
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